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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3121
DESCRIPTION *High Gain Bandwidth Product fT = 1500 MHz TYP. *Excellent Linearity
APPLICATIONS *TV tuner, UHF oscillator applications. *TV tuner, UHF converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
IB
B
Base Current-Continuous
25
mA
PC
Collector Power Dissipation @TC=25
0.15
W
TJ
Junction Temperature
125
Tstg
Storage Temperature Range
-55~125
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3121
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
15
V
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
A
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0
A
hFE
DC Current Gain
IC= 8mA ; VCE= 3V
60
320
fT
Current-Gain--Bandwidth Product
IC= 8mA ; VCE= 10V
1100
1500
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
0.9
1.3
pF
rbb' * CC
Base Time Constant
IC= 8mA ; VCB= 10V;f= 30MHz
7
12
ps
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3121
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3121
isc Websitewww.iscsemi.cn
4


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